B diffusion in implanted Ni2Si and NiSi layers - Aix-Marseille Université Access content directly
Journal Articles Applied Physics Letters Year : 2010

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hal-02386108 , version 1 (29-11-2019)

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I. Blum, A. Portavoce, L. Chow, D. Mangelinck, K. Hoummada, et al.. B diffusion in implanted Ni2Si and NiSi layers. Applied Physics Letters, 2010, 96 (5), pp.054102. ⟨10.1063/1.3303988⟩. ⟨hal-02386108⟩
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