Journal Articles
Applied Physics Letters
Year : 2010
Alain Portavoce : Connect in order to contact the contributor
https://amu.hal.science/hal-02386108
Submitted on : Friday, November 29, 2019-10:51:32 AM
Last modification on : Friday, March 24, 2023-2:53:14 PM
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I. Blum, A. Portavoce, L. Chow, D. Mangelinck, K. Hoummada, et al.. B diffusion in implanted Ni2Si and NiSi layers. Applied Physics Letters, 2010, 96 (5), pp.054102. ⟨10.1063/1.3303988⟩. ⟨hal-02386108⟩
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