Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001) - Aix-Marseille Université Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2004

Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001)

M. Kammler
  • Function : Author
R. Hull
  • Function : Author
M. Copel
  • Function : Author
F. Ross
  • Function : Author
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hal-02386256 , version 1 (29-11-2019)

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A. Portavoce, M. Kammler, R. Hull, M. Reuter, M. Copel, et al.. Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001). Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 70 (19), ⟨10.1103/PhysRevB.70.195306⟩. ⟨hal-02386256⟩
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