Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation - Aix-Marseille Université Access content directly
Journal Articles Materials Science and Engineering: B Year : 2003

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hal-02393594 , version 1 (04-12-2019)

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A. Ronda, I. Berbezier, A. Pascale, A. Portavoce, F. Volpi. Experimental insights into Si and SiGe growth instabilities: Influence of kinetic growth parameters and substrate orientation. Materials Science and Engineering: B, 2003, 101 (1-3), pp.95-101. ⟨10.1016/S0921-5107(02)00661-X⟩. ⟨hal-02393594⟩
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