Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate - Aix-Marseille Université Access content directly
Journal Articles Defect and Diffusion Forum Year : 2012
No file

Dates and versions

hal-02393966 , version 1 (04-12-2019)

Identifiers

Cite

Omar Abbes, Feng Xu, Alain Portavoce, Christophe Girardeaux, Khalid Hoummada, et al.. Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate. Defect and Diffusion Forum, 2012, 323-325, pp.439-444. ⟨10.4028/www.scientific.net/DDF.323-325.439⟩. ⟨hal-02393966⟩
15 View
0 Download

Altmetric

Share

Gmail Facebook X LinkedIn More