Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells - Aix-Marseille Université Access content directly
Conference Papers Year : 2019
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hal-02450871 , version 1 (23-01-2020)

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Francois Atteia, Judikaël Le Rouzo, Gérard Berginc, Jean-Jacques Simon, Ludovic Escoubas. Black silicon (BS) using room-temperature reactive ion etching (RT-RIE) for interdigitated back contact (IBC) silicon solar cells. Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VIII, Feb 2019, San Francisco, France. pp.29, ⟨10.1117/12.2509326⟩. ⟨hal-02450871⟩
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