4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer - Aix-Marseille Université Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2016
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hal-03350099 , version 1 (21-09-2021)

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Fatima Issa, Laurent Ottaviani, Dora Szalkai, Lvermeer Vermeeren, Vanessa Vervisch, et al.. 4H-SiC Neutron Sensors Based on Ion Implanted 10 B Neutron Converter Layer. IEEE Transactions on Nuclear Science, 2016, 63 (3), pp.1976-1980. ⟨10.1109/TNS.2016.2565439⟩. ⟨hal-03350099⟩
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