Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron - Aix-Marseille Université Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2014
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hal-03350134 , version 1 (21-09-2021)

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F. Issa, V. Vervisch, L. Ottaviani, D. Szalkai, L. Vermeeren, et al.. Radiation Silicon Carbide Detectors Based on Ion Implantation of Boron. IEEE Transactions on Nuclear Science, 2014, 61 (4), pp.2105-2111. ⟨10.1109/TNS.2014.2320943⟩. ⟨hal-03350134⟩
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