Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon - Aix-Marseille Université Access content directly
Journal Articles Applied Physics Letters Year : 2006

Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon

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hal-03350260 , version 1 (21-09-2021)

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S. Dubois, O. Palais, P. Ribeyron. Determination at 300K of the hole capture cross section of chromium-boron pairs in p-type silicon. Applied Physics Letters, 2006, 89 (23), pp.232112. ⟨10.1063/1.2402261⟩. ⟨hal-03350260⟩
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