Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps - Aix-Marseille Université Access content directly
Journal Articles Journal of Physics: Condensed Matter Year : 2004

Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps

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hal-03350292 , version 1 (21-09-2021)

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P Hidalgo, O Palais, S Martinuzzi. Behaviour of metallic impurities at grain boundaries and dislocation clusters in multicrystalline silicon wafers deduced from contactless lifetime scan maps. Journal of Physics: Condensed Matter, 2004, 16 (2), pp.S19-S24. ⟨10.1088/0953-8984/16/2/003⟩. ⟨hal-03350292⟩
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