Local activation of light-induced degradation in co-doped boron-phosphorus silicon: Evidence of defect diffusion phenomena - Aix-Marseille Université Access content directly
Journal Articles Materials Science in Semiconductor Processing Year : 2021

Local activation of light-induced degradation in co-doped boron-phosphorus silicon: Evidence of defect diffusion phenomena

Abstract

This study is interested in the local activation of Light-induced degradation (LID) defect in highly co-doped silicon wafers with boron and phosphorus. For this purpose, the experiments are focused on measuring the minority carrier lifetime before and after LID activation via a mapping technique. The LID defect density exhibits a Gaussian distribution centered on the excitation point of the laser beam; the intensity of the Gaussian distribution of the LID defect varies with the concentration of the co-dopants. The lifetime of the minority carriers decreases in all-silicon sample regions, while the excitation laser beam focuses on an area of approximately one mm2. This observation indicates that LID defects are activated even in the unexcited areas of silicon wafers, suggesting a LID diffusion phenomenon from the laser excitation point to the whole silicon wafer. We deduce that a high phosphorus doping level in silicon wafers leads to a significant reduction in the LID effect.

Domains

Materials
Fichier principal
Vignette du fichier
Local activatyion LID Najjar 2021.pdf (771.45 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-03512883 , version 1 (07-03-2022)

Identifiers

Cite

M. Najjar, B. Dridi Rezgui, M. Bouaicha, O. Palais, B. Bessais, et al.. Local activation of light-induced degradation in co-doped boron-phosphorus silicon: Evidence of defect diffusion phenomena. Materials Science in Semiconductor Processing, 2021, 135, pp.106104. ⟨10.1016/j.mssp.2021.106104⟩. ⟨hal-03512883⟩
26 View
62 Download

Altmetric

Share

Gmail Facebook X LinkedIn More