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Article Dans Une Revue Journal of Applied Physics Année : 2023

New insights into diffusion-collection modeling of radiation-induced charge in semiconductor devices

Résumé

Charge diffusion from an ion track and its collection by a biased contact in a semiconductor domain is modeled and analyzed within the framework of the so-called diffusion-collection approach. We successively examine the case of charge diffusion from a point source and from a linear distribution, introducing and discussing the concept of collection velocity at the point where the collection current is evaluated. Analytical formulations of the collected charge, collection current and collection velocity are developed. Implications for the calculation of the soft error rate (SER) in complementary metal-oxide-semiconductor (CMOS) circuits exposed to ionizing particles are derived. Finally, our model provides new insights into the correct definition of the charge collection velocity in collection-diffusion models.
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Dates et versions

hal-04241142 , version 1 (13-10-2023)

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Jean-Luc Autran, Daniela Munteanu. New insights into diffusion-collection modeling of radiation-induced charge in semiconductor devices. Journal of Applied Physics, 2023, 134 (17), pp.175701. ⟨10.1063/5.0156698⟩. ⟨hal-04241142⟩
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