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Communication Dans Un Congrès Année : 2014

Radiation Sensitivity of Junctionless Double-Gate 6T SRAM Cells Investigated by 3-D Numerical Simulation

Résumé

The Junctionless Double-Gate (JL-DGFET) technology is potentially interesting for future ultra-scaled devices, due to the simplified manufacturing process and reduced leakage currents. In this work, we investigate, for the first time, the sensitivity to radiation of 6T SRAM cells built up of JL-DGFETs. A detailed comparison with SRAMs based on inversion-mode devices (FDSOI and IM-DGFET) is performed. Our simulations indicate that JL-DGFET SRAMs are naturally more immune to radiation than FDSOI SRAMs, but more sensitive to radiation than IM-DGFET SRAMs.
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Dates et versions

hal-04373115 , version 1 (04-01-2024)

Identifiants

  • HAL Id : hal-04373115 , version 1

Citer

Daniela Munteanu, Jean-Luc Autran. Radiation Sensitivity of Junctionless Double-Gate 6T SRAM Cells Investigated by 3-D Numerical Simulation. European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2014), Sep 2014, Berlin, Germany. ⟨hal-04373115⟩
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