Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM - Aix-Marseille Université
Communication Dans Un Congrès Année : 2011

Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM

Résumé

This work reports a long-duration (~ 3 years) real-time underground experiment of 65 nm SRAM technology at the underground laboratory of Modane (LSM) to quantify the impact of alpha-emitter on Soft Error Rate. We developed an original and full analytical charge deposition based on non constant Linear Energy Transfer (LET) to accurately model the diffusion/collection approach. Monte-Carlo simulation results based on this new model have been confronted to experimental data to analyze the alpha-particles impact on Multiple Ship Upset.
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Dates et versions

hal-04390971 , version 1 (12-01-2024)

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Sébastien Martinie, Jean-Luc Autran, Sébastien Sauze, Daniela Munteanu, Slawosz Uznanski, et al.. Underground characterization and modeling of alpha-particle induced Soft-Error Rate in CMOS 65nm SRAM. 12th European Conference on Radiation and Its Effects on Components and Systems (RADECS 2011), Sep 2011, Sevilla, Spain. pp.524-527, ⟨10.1109/RADECS.2011.6131359⟩. ⟨hal-04390971⟩
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