In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth - Aix-Marseille Université Access content directly
Conference Papers Year : 2016
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hal-01452239 , version 1 (01-02-2017)

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  • HAL Id : hal-01452239 , version 1

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M.G. Tsoutsouva, T. Riberi – Béridot, G. Regula, G. Reinhart, J. Baruchel, et al.. In situ synchrotron based investigation of grain kinetics and defects during silicon crystal growth. EDS (Extended Defects in Semiconductors) 2016, Sep 2016, Les Issambres, France. ⟨hal-01452239⟩
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