Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics - Aix-Marseille Université Access content directly
Journal Articles Applied Physics Letters Year : 2013
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hal-02385367 , version 1 (28-11-2019)

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O. Abbes, A. Portavoce, V. Le Thanh, C. Girardeaux, L. Michez. Phase formation during Mn thin film reaction with Ge: Self-aligned germanide process for spintronics. Applied Physics Letters, 2013, 103 (17), pp.172405. ⟨10.1063/1.4827100⟩. ⟨hal-02385367⟩
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