Journal Articles
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Year : 2004
Alain Portavoce : Connect in order to contact the contributor
https://amu.hal.science/hal-02386286
Submitted on : Friday, November 29, 2019-11:38:44 AM
Last modification on : Friday, March 24, 2023-2:53:14 PM
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A. Portavoce, I. Berbezier, P. Gas, A. Ronda. Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (15), ⟨10.1103/PhysRevB.69.155414⟩. ⟨hal-02386286⟩
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