Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress - Aix-Marseille Université Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2004
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hal-02386286 , version 1 (29-11-2019)

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A. Portavoce, I. Berbezier, P. Gas, A. Ronda. Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2004, 69 (15), ⟨10.1103/PhysRevB.69.155414⟩. ⟨hal-02386286⟩
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