Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities - Aix-Marseille Université Access content directly
Journal Articles Applied Physics Letters Year : 2003
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hal-02386291 , version 1 (29-11-2019)

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I. Berbezier, A. Ronda, A. Portavoce, N. Motta. Ge dots self-assembling: Surfactant mediated growth of Ge on SiGe (118) stress-induced kinetic instabilities. Applied Physics Letters, 2003, 83 (23), pp.4833-4835. ⟨10.1063/1.1633012⟩. ⟨hal-02386291⟩
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