Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art - Aix-Marseille Université Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2022

Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art

Abstract

Silicon carbide (SiC) semiconductor is an ideal material for solid-state nuclear radiation detectors to be used in high-temperature, high-radiation environments. Such harsh environments are typically encountered in nuclear reactor measurement locations as well as high-level radioactive waste and/or “hot” dismantling-decommissioning operations. In the present fleet of commercial nuclear reactors, temperatures in excess of 300 °C are often encountered, and temperatures up to 800 °C are anticipated in advanced reactor designs. The wide bandgap for SiC (3.27 eV) compared to more widely used semiconductors such as silicon (1.12 eV at room temperature) has allowed low-noise measurements to be carried out at temperatures up to 700 °C. The concentration of thermally induced charge carriers in SiC at 700 °C is about four orders of magnitude less than that of silicon at room temperature. Furthermore, SiC radiation detectors have been demonstrated to be much more resistant to the effects of radiation-induced damage than more conventional semiconductors such as silicon, germanium, or cadmium zinc telluride (CZT), and have been demonstrated to be operational after extremely high gamma-ray, neutron, and charged-particle doses. The purpose of the present review is to provide an updated state of the art for SiC neutron detectors and to explore their applications in harsh high-temperature, high- radiation nuclear reactor applications. Conclusions related to the current state-of-the-art of SiC neutron detectors will be presented, and specific ideal applications will be discussed.
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Dates and versions

hal-03930420 , version 1 (06-02-2023)

Identifiers

Cite

Frank Ruddy, Laurent Ottaviani, Abdallah Lyoussi, Christophe Destouches, Olivier Palais, et al.. Silicon Carbide Neutron Detectors for Harsh Nuclear Environments: A Review of the State of the Art. IEEE Transactions on Nuclear Science, 2022, 69 (4), pp.792-803. ⟨10.1109/TNS.2022.3144125⟩. ⟨hal-03930420⟩
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