Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits - Aix-Marseille Université Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2023

Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits

Abstract

The exponential dependence of the soft-error rate (SER) with critical charge in CMOS circuits, empirically proposed by Hazucha and Svensson, is derived in the framework of the diffusion-collection approach. A full analytical formulation is established, linking the SER with physical and technological parameters, notably the circuit supply voltage, carrier diffusion coefficient and ion characteristics.
Fichier principal
Vignette du fichier
TNS_Autran_Munteanu_2023_HAL.pdf (1.9 Mo) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-04059844 , version 1 (21-05-2023)

Identifiers

Cite

Jean-Luc Autran, Daniela Munteanu. Physics-based Analytical Formulation of the Soft Error Rate in CMOS Circuits. IEEE Transactions on Nuclear Science, 2023, 70 (5), pp.782-791. ⟨10.1109/TNS.2023.3263106⟩. ⟨hal-04059844⟩
65 View
16 Download

Altmetric

Share

Gmail Facebook Twitter LinkedIn More